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\begin{document}

\title{Investigation of DC and RF Characteristics of Spacer Layer Thickness
Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on \selectlanguage{greek}β-\selectlanguage{english}Ga
2 O 3 Substrate\selectlanguage{english}}



\author[1]{Trupti Lenka}%
\author[1]{G. Purnachandra Rao}%
\author[2]{N. El. I. Boukortt}%
\author[3]{Hieu Nguyen}%
\affil[1]{National Institute of Technology Silchar}%
\affil[2]{Kuwait College of Science and Technology}%
\affil[3]{New Jersey Institute of Technology}%


\vspace{-1em}



  
  \date{June 08, 2024}


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\selectlanguage{english}
\begin{abstract}
In this article, the performance analysis of recessed gate and
field-plated III-nitride Nano-HEMT (High Electron Mobility Transistor)
developed on \selectlanguage{greek}β-\selectlanguage{english}Ga \textsubscript{2}O \textsubscript{3} substrate with
and without AlN spacer layer is studied. The two-dimensional electron
gas (2DEG) formed at the AlGaN/GaN interface is crucial in changing the
characteristics of AlGaN/GaN HEMTs. The different transport, DC, and AC
characteristics of the proposed III-nitride HEMT with spacer layer are
numerically simulated and compared with the HEMT without spacer layer.
The major findings of this research demonstrate that the AlN spacer
layers large band off set, strong polarisation field, and high barrier
allow the increased concentration of 2DEG, when it is introduced between
AlGaN/GaN interface. Furthermore, the AlN layer moves the 2DEG
distribution shifts from the surface, which diminishes interface
scattering. Further, AlN thickness variation influences the polarisation
field and conduction band offset, which impacts the concentration and
mobility of 2DEG.%
\end{abstract}%



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\textbf{Hosted file}

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