Dislocation recovery experiments were conducted on predeformed olivine single crystals at temperatures of 1,450 to 1,760 K, room pressure, and oxygen partial pressures near the Ni-NiO buffer to determine the annihilation rate constants for [001](010) edge dislocations. The obtained rate constants were found to be comparable to those of previously determined [001] screw dislocations. The activation energies for the motion of both dislocations are identical. This result suggests that the motion of screw dislocations in olivine is not controlled by cross-slip but by the same rate-limiting process of the motion of edge dislocations, i.e., climb, under low-stress, high-temperature conditions. The diffusivity derived from dislocation climb indicates that dislocation recovery is controlled by Si pipe diffusion, rather than Si lattice diffusion. Our results suggest that the conventional climb-controlled model for olivine can be applied to motions of not only edge but also screw dislocations. Therefore, the previous proposed cross-slip model cannot explain the softness of asthenosphere.