4 Conclusions
Large-area MoOx/c-Si(n) SCH solar cells (M6 wafer) with
a front-contact back-junction structure and with a ICO/Ag stack as the
back reflector were fabricated according to the optimized fabrication
process. Inserting ICO with a suitable thickness of 110 nm between
MoOx and Ag effectively improves EQE in the
long-wavelength, reduces the contact resistance, and improves the
stability of the SCH solar cells. A power conversion efficiency of
21.59% is achieved on the champion SCH solar cell with the device area
of 274.15 cm2.
It was found that, although screen printing the metal grids before
depositing MoOx layer is beneficial to prevent the
deterioration of MoOx due to high temperatures, the
fabrication process is not conducive to reducing the interface defects.
Developing low-temperature metal grids technique is essential for
improving the performance of large-area SCH solar cells.