4 Conclusions
Large-area MoOx/c-Si(n) SCH solar cells (M6 wafer) with a front-contact back-junction structure and with a ICO/Ag stack as the back reflector were fabricated according to the optimized fabrication process. Inserting ICO with a suitable thickness of 110 nm between MoOx and Ag effectively improves EQE in the long-wavelength, reduces the contact resistance, and improves the stability of the SCH solar cells. A power conversion efficiency of 21.59% is achieved on the champion SCH solar cell with the device area of 274.15 cm2.
It was found that, although screen printing the metal grids before depositing MoOx layer is beneficial to prevent the deterioration of MoOx due to high temperatures, the fabrication process is not conducive to reducing the interface defects. Developing low-temperature metal grids technique is essential for improving the performance of large-area SCH solar cells.