Figure S2. (a) Current–voltage curves of the lateral-type memristor with Mw = 10000 gmol-1 according to the successive voltage sweeps with different compliance currents (CCs): CC = 10-7 A, 5×10−7 A, 10−6 A, 5×10−6 A, 10−5 A, and 3×10−5 A. (b) Memory retention properties of the device after the resistive switching processes with the different CC values.