Figure S8. The gold/poly (vinyl alcohol) (PVA)/indium tin oxide structured device for confirming the effect of the hydroxyl groups in the polymer on the resistive switching behavior of the PVA based memristor. (a) A schematic showing the device structure for analyzing the hydroxyl group effect. (b) A current−voltage curve for the device. Resistive switching characteristics were not observed in the device, which indicates that the hydroxyl group effect is not related with the memory behaviors of the developed PVA based memristor.